N. Rinaldi, M. Schröter, Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology: Modeling and Circuit Applications (River Publishers), (2022); https://doi.org/10.13052/rp-9788793519602.

M. Rudan, R. Brunetti, S. Reggiani, Handbook of semiconductor devices (Springer, 2023); https://doi.org/10.1007/978-3-030-79827-7.

Y. Shimura, C. Godfrin, A. Hikavyy, J. Aguilera, G. Katsaros, R. Loo, Compressively strained epitaxial Ge layers for quantum computing applications, Materials Science in Semiconductor Processing, 174, 108231 (2024); https://doi.org/10.1016/j.mssp.2024.108231.

E. Wangila, P. Lytvyn, H. Stanchu, C. Gunder, F. De Oliveira, S. Saha, G. Salamo, Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy, Crystals, 13(11), 1557(2023); https://doi.org/10.3390/cryst13111557.

H. Stanchu, S. Kryvyi, S. Margiotta, M. Cook, J. Grant, H. Tran, S. Yu, Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate, Journal of Physics D: Applied Physics, 57(25), 255107 (2024); https://doi.org/10.1088/1361-6463/ad365b.

C. Zhao, B. Xu, Z. Wang, Boron-doped III–V semiconductors for Si-based optoelectronic devices, Journal of Semiconductors, 41(1), 011301(2020); https://doi.org/10.1088/1674-4926/41/1/011301.

N. B. Singh, S. K. Shukla, Two-dimensional nanostructures for biomedical technology: Properties of two-dimensional nanomaterials (Elsevier, 2020); https://doi.org/10.1016/B978-0-12-817650-4.00003-6.

P. Chaisakul, N. Koompai, P. Limsuwan, , Theoretical investigation of a low-voltage Ge/SiGe multiple quantum wells optical modulator operating at 1310 nm integrated with Si3N4 waveguides, AIP Advances, 8(11), 115318(2018); https://doi.org/10.1063/1.5064701.

Y. Zhang, J. Gao, S. Qin, M. Cheng, K. Wang, L. Kai, J. Sun, , Asymmetric Ge/SiGe coupled quantum well modulators, Nanophotonics, 10(6), 1765(2021); https://doi.org/10.1515/nanoph-2021-0007.

T. Dutta, N. Yadav, Y. Wu, G. Cheng, X. Liang, S. Ramakrishna, A. Yadav, Electronic properties of 2D materials and their junctions, Nano Materials Science, 6(1), 1(2024); https://doi.org/10.1016/j.nanoms.2023.05.003.

K.C. Saraswat, Germanium. In 75th Anniversary of the Transistor, (Wiley, 2023); https://doi.org/10.1002/9781394202478.ch36.

J. Ding, H. Tong, J. Long, R. Zhang, B. Zhang, C. Wang, F. Qiu, ACS Applied Electronic, Microcrystal-induced crystallization effect for high-quality germanium/silicon heteroepitaxial nanofilms, Materials, 3(8), 3391(2021); https://pubs.acs.org/doi/10.1021/acsaelm.1c00373.

K. Sawano, Y. Hoshi, S. Kubo, K. Arimoto, J. Yamanaka, K. Nakagawa, Y. Shiraki, Structural and electrical properties of Ge (111) films grown on Si (111) substrates and application to Ge (111)-on-Insulator, Thin Solid Films, 613, 24(2016); https://doi.org/10.1016/j.tsf.2015.11.020.

M. Myronov, Molecular Beam Epitaxy of High Mobility Silicon, Silicon Germanium and Germanium Quantum Well Heterostructures. In Molecular Beam Epitaxy (Elsevier, 2018); https://doi.org/10.1016/B978-0-12-812136-8.00003-7.

A. Ghosh, M. Clavel, P. Nguyen, M. Meeker, G. Khodaparast, R. Bodnar, M. Hudait, Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy, Aip Advances, 7(9), 095214(2017); https://doi.org/10.1063/1.4993446.

S. Bedell, S. Hart, S. Bangsaruntip, C. Durfee, J. Ott, M. Hopstaken, P. Gumann, Low-temperature growth of strained germanium quantum wells for high mobility applications, ECS Transactions 98(5), 215(2020); https://doi.org/10.1149/09805.0215ecst.

T. Nagano, R. Hara, K. Moto, K. Yamamoto, T. Sadoh, Improved carrier mobility of Sn-doped Ge thin films (≤ 20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation, Materials Science in Semiconductor Processing,165, 107692(2023); https://doi.org/10.1016/j.mssp.2023.107692.

A. Nigro, E. Jutzi, N. Forrer, A. Hofmann, G. Gadea, I. Zardo, High quality Ge layers for Ge/SiGe quantum well heterostructures using chemical vapor deposition, Physical Review Materials, 8(6), 066201(2024); https://doi.org/10.1103/PhysRevMaterials.8.066201.

L. Wei, Y. Miao, Y. Ding, C. Li, H. Lu, Y. Chen, Ultra high hole mobility in Ge films grown directly on Si (100) through interface modulation, Journal of Crystal Growth 548, 125838 (2020); https://doi.org/10.1016/j.jcrysgro.2020.125838.

G. Zhou, K. Lee, D. Anjum, Q. Zhang, X. Zhang, C. Tan, G. Xia, Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion, Optical Materials Express, 8(5), 1117 (2018); https://doi.org/10.1364/OME.8.001117.

X. Yu, H. Jia, J. Yang, M. Masteghin, H. Beere, M. Mtunzi, H. Liu, Effects of phosphorous and antimony doping on thin Ge layers grown on Si, Scientific Reports, 14(1), 7969(2024); https://doi.org/10.1038/s41598-024-57937-8

S.V. Luniov, Calculation of Electron Mobility for the Strained Germanium Nanofilm, Journal of Nano-and Electronic Physics, 11(2), 02023 (2019); https://jnep.sumdu.edu.ua/en/full_article/2732.

S.V. Luniov, P.F. Nazarchuk, O.V. Burban, Electrical properties of strained germanium nanofilm, Physics and Chemistry of Solid State, 22(2), 313 (2021); https://doi.org/10.15330/pcss.22.2.313-320.

S. Luniov, O. Burban, Y. Koval, IEEE 10th International Conference Nanomaterials: Applications & Properties 02TM03-1 (IEEE, Sumy, 2020); https://ieeexplore.ieee.org/document/9309623.

S.V. Luniov, P.F. Nazarchuk, O.V. Burban, Calculation of the Electron Mobility for the Δ1-Model of the Conduction Band of Germanium Single Crystals, Semiconductors, 48(4), 438 (2014); https://doi.org/10.1134/S1063782614040198.

S.V. Luniov, O.V. Burban, P.F. Nazarchuk, Electron scattering in the ∆1-model of the conduction band of germanium crystals, Semiconductors, 49(5), 574 (2015); https://doi.org/10.1134/S1063782615050140.

S.V. Luniov, The impact of intrinsic conductivity on the mechanisms of tensoresistance of uniaxially deformed n-Ge single crystals, Journal of Physical Studies, 23(3), 3701 (2019); https://doi.org/10.30970/jps.23.3701.

S.V. Luniov, Calculation of band structure of the strained germanium nanofilm, doped with a donor impurity, Physica E: Low-dimensional Systems and Nanostructures, 118, 113954 (2020); https://doi.org/10.1016/j.physe.2020.113954.

U. Mishra, J. Singh, Semiconductor Device Physics and Design (Springer, Netherlands, 2008); https://doi.org/10.1007/978-1-4020-6481-4.

G. Bir, G. Pikus, D. Louvish, Symmetry and strain-induced effects in semiconductors (Wiley, New York, 1974).

S.V. Luniov, P.F. Nazarchuk, O.V. Burban, Parameters of the high-energy Δ1-minimum of the conduction band in n-Ge, Journal of Physical Studies, 17(3), 3702 (2013); https://doi.org/10.30970/jps.17.3702.